Wafers are produced from slicing a silicon ingot into individual wafers. In this process, the ingot is first ground down to the desired diameter, typically 200 mm. Next, four slices of the ingot are sawn off resulting in a pseudo-square ingot with 156 mm side length. Then, the wafers are sawn using wire with 180 μm thickness of hard steel wire (resulting in a kerf loss of approximately 200 μm). The wire spacing can be adjusted to produce the desired wafer thickness. The wires are wrapped around rotating rollers with equidistant grooves and move at a speed of approximately 10 m/s. Several mono or multicrystalline silicon ingots are glued to a glass plate and a moved through the mesh of wires with a speed of less than 1 mm/s, as shown in Figure 1. During the whole wire sawing process, an abrasive slurry containing silicon carbide powder is fed into the system and hence this process is typically referred to as slurry based wire sawing. The sawing process takes 6-8 hours for a typical 156 mm block of silicon and the end result is shown in Figure 2.
The process from Cz pulling to wafer sawing is shown in the animation below.
 P. J. Verlinden, “Semiconductor materials and their properties,” in Photovoltaic Solar Energy: From Fundamentals to Applications, A. Reinders, P. J. Verlinden, W. Van Der Stark, and A. Freundlich, Eds., 2017. Available: https://onlinelibrary.wiley.com/doi/abs/10.1002/9781118927496.ch2